Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Epitaxial 3C-SiC formation at the SiO2/Si interface by C+ Implantation into SiO2 and subsequent annealing

Voelskow, M.; Panknin, D.; Polychroniadis, E. K.; Ferro, G.; Monteil, Y.; Godignion, P.; Mestres, N.; Skorupa, W.; Stoemenos, J.

Keywords: SiC formation; carbon implantation; SiO2

• Lecture (Conference)
  5th European Conference Silicon Carbide and Related Materials, 31.08.-04.09.2004, Bologna, Italy

Permalink: https://www.hzdr.de/publications/Publ-9930