Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

6H-SiC samples were amorphised by multiple Al implantations at room temperature, in order to study the annealing process. The paper deals with the influence of specific annealing conditions, such as furnace atmosphere and heating rate, on SiC reordering and Al profile. Below a certain deposited nuclear energy, solid phase epitaxy is possible and leads to recrystallisation under precise conditions (high heating rate, silicon partial pressure prescribed). Above it, material etching and dopant losses are observed, even though annealing has proven to be efficient for avoiding surface impairment (due to a specific cleaning process).