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Investigation of the damage induced by 200 keV Ge⁺ ion implantation in 6H-SiC

Pacaud, Y.; Skorupa, W.; Perez-Rodriguez, A.; Brauer, G.; Stoemenos, J.; Barklie, R.

• Nuclear Instruments and Methods in Physics Research B 112 (1996) pp. 321-324
  DOI: 10.1016/0168-583X(95)01006-8
  Cited 4 times in Scopus

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