Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Reliably acting diffusion barrier films are basically for the functionality of the copper inter-connect technology. Tantalum (Ta) and Tantalum nitride (TaN) are established materials for diffusion barriers against copper diffusion. In this study, the characterization of TaN like films produced using N+ plasma immersion ion implantation (PIII) was performed using Auger electron spectroscopy (AES). Chemical information was extracted from the Auger data using linear least square fit (LLS). The capability of the method in order to detect very little changes in the film composition dependent on small process changes was demonstrated. The nitrogen incorporation by PIII into high aspect ratio contact holes was proven using analytical TEM.