Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationDeep level defects in 6H silicon carbide
Ling, C. C.; Chen, X. D.; Fung, S.; Beling, C. D.; Gong, M.; Ge, W. K.; Wang, J. N.; Brauer, G.
Abstract
We have investigated the electrically active deep level defects in n-type 6H silicon carbide through the use of a series of complimentary spectroscopic techniques such as deep level transient spectroscopy, positron annihilation spectroscopy and photolumniescence. The deep level defects were created by neutron irrdiation, He implantation and electron irradiation with different energies. After analysis of the information gained from the different types of spectroscopy, as well as consideration of the defect creation and annealing behavior under different controlled environments, we provide experimental evidence for the microstructure of certain important deep level defects.
Keywords: 6H-SiC; electron irradiation; deep level defect; positron annihilation
-
Physics 33(2004), 286-790
Permalink: https://www.hzdr.de/publications/Publ-8156
Years: 2023 2022 2021 2020 2019 2018 2017 2016 2015