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SIMS investigation of gettering centres produced by phosphorus MeV ion implantation.

Krecar, D.; Fuchs, M.; Kögler, R.; Hutter, H.

Abstract

Damage caused by ion implantation act as effective gettering region, collecting unwanted metal impurities. In this study the consequences of high-energy ion implantation into silicon and subsequent annealing were analysed by means of secondary ion mass spectrometry (SIMS). The differences in impurity gettering behaviour were studied in dependence of the implantation dose and annealing time at T= 900oC.

Keywords: ion implantation; silicon; metal impurities; secondary ion mass spectrometry; SIMS

  • Contribution to proceedings
    13th Applied Surface Analysis Workshop, AOFA 13(2004), 30.09.2004, Dresden, Deutschland
  • Applied Surface Science 252(2005)1, 278-281

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