Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

The further miniaturization of silicon micromechanical
structures in combination with the high developed microelectronic technology
at the mm- and sub-mm level will lead to a new generation of microdevices.
A modern technique to fabricate three dimensional micromechanical structures
is the combination of high concentration p+-doping by writing ion implantation
using a focused ion beam (FIB) and subsequent anisotropic and selective
wet chemical etching. FIB patterned and chemical etched 3D structures have
been fabricated using 35 keV Ga+-ion implantation and subsequent anisotropic
etching in KOH/H2O-solution. The Ga+-FIB patterned test structures were
characterized by scanning electron microscopy.