Si- and Ge nanoclusters in ion implanted SiO2: electrical properties and memory applications

Gebel, Thoralf

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Si- and Ge nanoclusters in ion implanted SiO2: electrical properties and memory applications

Gebel, T.

Abstract

The talk gives an overwiew about current results from IV and CV investigations of Ge and Si implanted oxide layers. The electric properties of the devices and the investigation of memory parameters will be discussed.

Keywords: non volatile memory; nanocluster

Lecture (others)
Lecture at the Institute of Semiconductor Physics, Academy of Science, 16.11.2001, Kiev (Ukraine)

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