Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationHigh dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation
Ueda, M.; Reuther, H.; Günzel, R.; Beloto, A. F.; Abramof, E.; Berni, L. A.
Abstract
PIII was used to dope Si (001) wafers with nitrogen and carbon at high doses, relying on two PIII systems: one at the FZR and the other at INPE.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 175-177 (2001) 715-720
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