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Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Steuer, O.; Michailow, M.; Hübner, R.; Pyszniak, K.; Turek, M.; Kentsch, U.; Ganss, F.; Khan, M. M.; Rebohle, L.; Zhou, S.; Knoch, J.; Helm, M.; Cuniberti, G.; Georgiev, Y.; Prucnal, S.

Keywords: Implantation; SiGeSn; Si1-x-yGeySnx; Sn; FLA; Flash lamp annealing

Involved research facilities

• Ion Beam Center DOI: 10.17815/jlsrf-3-159

Related publications

• DOI: 10.17815/jlsrf-3-159 is cited by this (Id 39199) publication

• Reseach data in the HZDR data repository RODARE
  Publication date: 2024-06-12 Closed access
  DOI: 10.14278/rodare.3015
  Versions: 10.14278/rodare.3016

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• Veröffentlichung im HZDR-Daten-Repository RODARE - Id 3015

Permalink: https://www.hzdr.de/publications/Publ-39199