Nonlinear response of semiconductor under intense THz excitation

Pashkin, Oleksiy

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Nonlinear response of semiconductor under intense THz excitation

Pashkin, O.

Abstract

Intense narrowband terahertz pulses from the FELBE free-electron laser facility and a complementary table-top high-field THz source are utilized to study nonlinear excitation regimes in semiconductors. In this talk we present several recent examples including impurities transitions in boron doped Si, HgTe topological quantum wells and plasmons in individual InGaAs nanowires.

Involved research facilities

Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
F-ELBE

Related publications

DOI: 10.17815/jlsrf-2-58 is cited by this (Id 38069) publication

Invited lecture (Conferences)
Joint ELI Workshop on Advanced Technologies, 04.-06.12.2023, Szeged, Hungary

Permalink: https://www.hzdr.de/publications/Publ-38069

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