Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Progress in computing technologies enforces an active search for novel materials, assuring low-power and high-speed operations. One of prospective materials for such needs is Cr2O3. Here, we discuss access to the order parameters and properties of antiferromagnetic domain walls related to the possibility of electric operations on them, as well as fundamental and technological perspectives of the recently accessed flexomagnetism in thin Cr2O3 films.