Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

The practical application of positron annihilation spectroscopies to SiC, i.e. conventional positron lifetime and Doppler broadening measurements as well as slow positron implantation studies, will be demonstrated and discussed. It will be shown how to finally obtain materials characteristics which are of general interest, i.e. well beyond the ordinary positron annihilation parameters. As a second example, some results from the investigation of Pt layers on alumina will be presented.