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Depth analysis of buried iron disilicide formation by Fe ion implantation into Si

Walterfang, M.; Kruijer, S.; Keune, W.; Dobler, M.; Reuther, H.

Abstract

200 keV Fe ions were implanted into Si(111) at 350 °C .

  • Applied Physics Letters 76 (2000) 1413-1415

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