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Defect characterization using positron annihilation spectroscopy on laser ablated surfaces

Hosemann, P.; Auguste, R.; Lam, S.; Butterling, M.; Liedke, M. O.; Elsherif, A. G. A.; Hirschmann, E.; Wagner, A.; Grigoropoulos, C. P.; Selim, F.; Uberuaga, B. P.

Abstract

In recent years, short, pulsed laser ablation has been gaining popularity for machining small scale test geometries from bulk samples and for efficient serial sectioning. These laser-based techniques are being added to the toolbox in material science, which makes it necessary to understand the changes in the material that occur from the laser-material interaction. Positron annihilation spectroscopy is a unique, nondestructive technique to investigate small defects in materials difficult to investigate by other tools. In this work, Doppler broadening and positron lifetime annihilation spectroscopy are utilized to help quantify the damage in materials treated with short, pulsed lasers. Using a femtosecond laser on single crystal silicon, this manuscript shows that clusters of vacancy-like defects and small voids increase systematically with laser power. The damage induced by the laser can also reach to micrometer depths.

Keywords: Si; fs-laser; positron annihilation spectroscopy; Doppler broadening; pores

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Permalink: https://www.hzdr.de/publications/Publ-33184


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