Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-band-gap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-tometal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power-law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2–50 K. These results show that the electron wave function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction.