Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationAdvanced doping issues using nonequilibrium processing
Skorupa, W.; Rebohle, L.; Prucnal, S.; Berencen, Y.; Zhou, S.; Helm, M.
Abstract
In this talk I will introduce with a short view on the background of the transistor invention as a key element driving the topic of semiconductor doping. After that I will discuss examples of advanced doping including ion beam based and other methods: doping and alloying of germanium, hyperdoping of silicon, doping from deposited layers, doping of silicon nanowires, doping from deposited layers. In all cases the experiments were performed in correlation to nonequilibrium thermal processing using flash lamps in the millisecond time range.
Keywords: semiconductor doping; ion beam based methods; flash lamp annealing
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 28311) publication
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Lecture (others)
Eingeladener Seminarvortrag an der Marie-Curie-Universität Lublin/Polen, 11.10.2018, Lublin, Polen
Permalink: https://www.hzdr.de/publications/Publ-28311
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