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Cluster tool for in situ processing and comprehensive characterization of thin films at high temperatures

Wenisch, R.; Lungwitz, F.; Hanf, D.; Heller, R.; Zscharschuch, J.; Hübner, R.; von Borany, J.; Abrasonis, G.; Gemming, S.; Escobar Galindo, R.; Krause, M.

Abstract

A new cluster tool for in situ real-time processing and depth-resolved compositional, structural and optical characterization of thin films at temperatures from -100 to 800 °C is described. The implemented techniques comprise magnetron sputtering, ion irradiation, Rutherford backscattering spectrometry, Raman spectroscopy and spectroscopic ellipsometry. The capability of the cluster tool is demonstrated for a layer stack MgO/ amorphous Si (~60 nm)/ Ag (~30 nm), deposited at room temperature and crystallized with partial layer exchange by heating up to 650°C. Its initial and final composition, stacking order and structure were monitored in situ in real time and a reaction progress was defined as a function of time and temperature.

Keywords: Cluster tool; thin films; in situ; high temperature; Rutherford backscattering; Raman spectroscopy; ellipsometry; metal-induced crystallization

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