Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Semiconductor structures with dimensions in the nanometer range become more and more important in microelectronics and other new emerging technologies. Thereby, the transition from bulk to nanomaterials often requires significant changes in the process technology, including the change from equilibrium to non-equilibrium processes. In this work, we investigate the modification of nanomaterials by flash lamp annealing with pulse lengths in the millisecond range [1]. In detail, we focus on two specific materials: (i) the annealing of thin ZnO layers and the impact of different process conditions on the materials properties, and (ii) the high-level doping of Si and Ge nanowires for sensor applications by ion implantation and flash lamp annealing.