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1 PublicationBipolar resistive switching of p-YMnO3/n-SrTiO3:Nb junctions
Bogusz, A.; Blaschke, D.; Abendroth, B.; Skorupa, I.; Bürger, D.; Schmidt, O. G.; Schmidt, H.
Abstract
Resistive switching (RS) phenomena of oxides in metal-insulatormetal structures have been widely investigated due to promising applications as a non-volatile memory and in neuromorphic circuits. In our previous works, we have demonstrated unipolar RS of YMnO3-based structures [1]. This work investigates the non-volatile RS switching in Au/YMnO3-/Nb:SrTiO3-/Al structures with (p-YMnO3-)-(n-Nb:SrTiO3-) junctions. The YMnO3- films are deposited by pulsed laser deposition on the (100)-SrTiO3- doped with 0.5 wt.% of Nb substrates and exhibit bipolar RS. Observed RS behavior is assigned to the coupled electronic and ionic processes which depend on the depletion layer extension in the p-n junction. Exploitation of RS in p-n junctions offers additional functionalities of memristive devices, e.g. related to their optical properties.
[1] A. Bogusz et al., AIP Advances 4 (2014), A. Bogusz et al., Adv. Mater. Res. 1101 (2015).
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 23452) publication
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Lecture (Conference)
DPG Spring Meeting, 06.-11.03.2016, Regensburg, Germany
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