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1 PublicationProton and electron Irradiation in oxynitrided gate 4H-SiC MOSFET: A recent open issue
Michel, P.; Florentin, M.; Alexandru, M.; Constant, A.; Monserrat, J.; Millan, J.; Godignon, P.
Abstract
Long-term degradation of MOS devices has to be avoided in different harsh irradiated environments, especially for aerospace or military applications. In this paper, an overview of the irradiation experiments recently performed on 4H-SiC MOSFETs having an oxynitrided gate oxide is given, with a special focus on the threshold voltage and the effective channel mobility drifts. The general mechanisms taking place during irradiation and post-annealing treatments are described. Finally, new open issues recently observed by performing the temperature measurement on irradiated MOSFETs are introduced and discussed.
Keywords: Charge trapping; Electron; Irradiation; Mobility; Proton; SiC MOSFET; SiO2/SiC interface; Threshold voltage; Time bias stress instability
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 23146) publication
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Contribution to proceedings
European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France 21-25 September 2014, 21.-25.09.2014, Grenoble, France
Materials Science Forum, Volume 821-823, 667-672
DOI: 10.4028/www.scientific.net/MSF.821-823.667
Cited 7 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-23146
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