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Studies of buried (SiC)_1-x(AIN)_x layers formed by co-implantation of N⁺ and Al⁺ ions into 6H-SiC

Pezoldt, J.; Yankov, R. A.; Voelskow, M.; Brauer, G.; Anwand, W.; Heera, V.; Skorupa, W.; Coleman, P.

• Contribution to external collection
  Proc. 7th Int. Conf. Defect Recognition and Image Processing of Semicond. (DRIP VII) Inst. Phys. Conf. Ser. No. 160 (1998) IOP Publ. Ltd. Bristol, 1998, 335

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