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1 PublicationDensity change upon crystallization of Ga-Sb films
Putero, M.; Coulet, M.-V.; Muller, C.; Cohen, G.; Hopstaken, M.; Baehtz, C.; Raoux, S.
Abstract
Besides crystallization time and temperature, the mass density change upon crystallization is a key parameter governing the reliability of phase change random access memory. Indeed, few percentages density change induces considerable mechanical stress in memory cells, leading to film delamination with subsequent electrical failures. This letter presents an extensive study of density change upon crystallization in a series of Ga-Sb thin films with various antimony contents. The mass density of the films is precisely determined by x-ray reflectivity in both their amorphous and crystalline states. The variations of the density in crystalline and amorphous films according to the Sb content found to cross with a zero-density change for 70 at. % Sb. The peculiar behavior of Ga-Sb thin films upon crystallization may be linked to their stress state and mechanical properties.
Keywords: phase change material; x-ray; diffraction; reflectivity
Involved research facilities
- Rossendorf Beamline at ESRF DOI: 10.1107/S1600577520014265
Related publications
- DOI: 10.1107/S1600577520014265 is cited by this (Id 21294) publication
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Applied Physics Letters 105(2014), 1819101-1819105
DOI: 10.1063/1.4901321
Cited 18 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-21294
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