Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationLocal Ion Irradiation Induced Resistive Threshold and Memory Switching in Nb2O5/NbOx Films
Wylezich, H.; Mähne, H.; Rensberg, J.; Ronning, C.; Zahn, P.; Slesazeck, S.; Mikolajick, T.
Abstract
Summarizing, metal-insulator-metal devices consisting of one insulating Nb2O5 layer were irradiated with krypton ions to form a metallic NbOx sublayer in order to introduce threshold switching. Two effects were identified that induce this metallic NbOx layer: preferential sputtering at the sample surface and interface mixing at the bottom electrode. These krypton irradiated devices can be operated either as a pure threshold switch or as a combination of both, threshold switch and memory element. The presented fabrication method enables costefficient device manufacturing, since ion irradiation could be structured easily using well established lithography methods. Thus, the threshold switch can be formed in defined areas, e.g. the intersection of top and bottom electrode in cross bar arrays.
Keywords: resistive switching; threshold switching; niobium oxide; ion irradiation
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 20152) publication
-
ACS Applied Materials and Interfaces 6(2014)20, 17474-17480
DOI: 10.1021/am5021149
Cited 48 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-20152
Years: 2023 2022 2021 2020 2019 2018 2017 2016 2015