Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Abstract: Resistive switching devices are considered as one of the most promising candidates for the next generation memories and nonvolatile logic applications. In this paper, we present BiFeO3:Ti/BiFeO3 (BFTO/BFO) bilayer structures with optimized BFTO/BFO thickness ratio which show symmetric, bipolar, and nonvolatile resistive switching. The resistive switching mechanism is understood by a model of flexible top and bottom Schottky-like barrier heights in the BFTO/BFO bilayer structures. For the nonvolatile logic applications, the polarity of reading bias can be used as an additional logic variable, which makes it feasible to program and store all 16 Boolean logic functions into a single cell of a BFTO/BFO bilayer structure in three logic cycles. In comparison to standard logic hardware solutions, the proposed memristive bilayer structures allow for simplified parallel, sequential, and looped logical processing.