Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing

Zhou, S.; Wang, Y.; Jiang, Z.; Weschke, E.; Helm, M.

doi:10.1143/APEX.5.093007

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Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing

Zhou, S.; Wang, Y.; Jiang, Z.; Weschke, E.; Helm, M.

Abstract

Ferromagnetic InMnAs has been prepared by Mn ion implantation and pulsed laser annealing. The InMnAs layer reveals a saturated magnetization of 2.6 µB/Mn at 5 K and a perpendicular magnetic anisotropy. The Curie temperature is determined to be 46 K, which is higher than those in previous reports with similar Mn concentrations. Ferromagnetism is further evidenced by the large magnetic circular dichroism.

Keywords: Ferromagnetic semiconductors; Ion implantation; Pulsed Laser annealing

Involved research facilities

Ion Beam Center DOI: 10.17815/jlsrf-3-159

Related publications

DOI: 10.17815/jlsrf-3-159 is cited by this (Id 17862) publication

Applied Physics Express 5(2012), 093007
DOI: 10.1143/APEX.5.093007
Cited 12 times in Scopus

Permalink: https://www.hzdr.de/publications/Publ-17862

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