Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationMagnetic Mn-doped indium tin oxide films prepared by vacuum thermal evaporation
Scarlat, C.; Xu, Q.; Mok, K.; Shalimov, A.; Fronk, M.; Salvan, G.; Zahn, D. R. T.; Helm, M.; Schmidt, H.; Iacomi, F.
Abstract
Indium tin oxide (ITO) can be made a highly conductive transparent coating contact in photovoltaics by doping. Undoped and Mn doped indium tin oxide (ITO) thin films were grown on SiO2/Si substrates by vacuum thermal evaporation (VTE) using sources with atomic ratios of In:Sn:Mn=114:12:13, 109:12:7, 122:12:4, and 122:12:0. In order to have practically stress-free ITO films [1], all the samples were annealed at 450 oC for 2 hours in air. Magnetotransport measurements reveal negative magnetoresistance while no anomalous Hall effect is observed. The Mn-doped ITO films exhibit room temperature ferromagnetism after annealing. We analyzed the magnetization data from SQUID measurements using simulations based on the Preisach approach and derived the magnetic parameters of nanoparticles in the Mn-doped ITO films, namely, the magnetization of individual particles and the distributions of coercive and interparticle interaction fields. The samples were also investigated by magneto-optical Kerr effect spectroscopy and Vector Magnetooptical Generalized Ellipsometry measurements to explore possible combined functionalities in photovoltaics and magnetooptics.
[1] L Kerkache et al., J. Phys. D: Appl. Phys. 39 184–189, (2006).
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 16499) publication
-
Poster
Next Generation Solar Energy From Fundamentals to Applications, 12.-14.12.2011, Erlangen, Germany
Permalink: https://www.hzdr.de/publications/Publ-16499
Years: 2023 2022 2021 2020 2019 2018 2017 2016 2015