Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Electrical transport characteristics of structures consisting of normal metals and ferromagnetic materials depend strongly on the magneti- zation direction of the ferromagnets. Thus, different spin polarizations can lead to different resistance values of such structures. The absorp- tion of spin polarized electrons in a ferromagnetic material (spin transfer torque) by domain/domain walls leads to magnetization switching or domain wall movement. This can be achieved by driving a current perpendicular to the plane of the ferromagnet (CPP) or in the plane (CIP). In this experiment we investigate the magnetization behavior of ferromagnetic nanopillars located between two lateral spin injectors in the CIP configuration. Using Scanning Transmission X-ray Mircoscopy (STXM) these studies will give more insights in the switching behav- ior and dynamics. Technological applications can mostly be found in memory structures, where the magnetization can be stored and read out.