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Gas phase silanization at normal pressure of Si-based integrated light emitters for smart biosensor applications

Germer, S.; Cherkouk, C.; Rebohle, L.; Helm, M.; Skorupa, W.

Abstract

A different silanization method for SiO2 surfaces has been raised for Si-based light emitter which are considered as light sources in sensors for the detection of harmful biomolecules. This approach uses a special experimental setup for gas phase silanization (GPS) and is based on the evaporation and deposition in nitrogen atmosphere at normal pressure for 15 minutes with different silane volumes. The light emitter has a SiO2 passivation layer on the top which was hydrolyzed in an in situ hybridization chamber and catalyzed with MES (2-(N-morpholino)ethanaesulfone acid hydrate) buffer solution. Afterward, the substrates were silanized with the GPS method using the organosilane (3-Aminopropyl)trimethoxysilane (APTMS). Infrared spectroscopy, X-ray spectroscopy and Atomic force microscopy were used to control and characterize the structure of the SiO2 surface and the APTMS layer. The results demonstrate a successful covalent binding of the coupling agent and the interaction of the deposited molecules with each other. The roughness of the modified surface was investigated by the Atomic force microscopy. The silanized samples show rough and textured surfaces. At last, the suitability of the developed GPS method was verified on light emitters.

Keywords: Si-based light emitter; biosensor; APTMS; silanization; amines

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