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Ion Implantation in AFM Cantilever Array Fabrication

Schmidt, B.; Zier, M.; Potfajova, J.; Philipp, P.

Abstract

Low energy ion implantation has been applied to fabrication of shallow piezoresistive elements for AFM deflection sensing. The corresponding process parameters have been optimized to meet the demands of the electronics (power supply, resistance) connected to the piezoresistors. For the dimension (length x width = 5x20 µm2) of the piezoresistors designed by the University of Ilmenau, the resistance of them is 2.3-2.5 kOhm. The full processing of PRONANO AFM arrays consists additional three ion implantation steps for integrated heater and interconnect fabrication as well as for substrate reverse-biasing.

Keywords: cantilever; array; piezoresistor; ion implantation; shallow pn-junction; sheet resistance

Involved research facilities

Related publications

  • Contribution to external collection
    T. Sulzbach, I. W. Rangelow: PRONANO Proceedings of the Integrated Project on Massively Parallel Intelligent Cantilever Probe Platforms for Nanoscale Analysys and synthesis, Münster: Monsenstein und Vannerdat OHG (MV Wissenschaft), 2010, 978-3-86991-117-9, 111-117

Permalink: https://www.hzdr.de/publications/Publ-14802


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