Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication

Ion-beam synthesis of InSb nanocrystals within the buried SiO2 layer of silicon-on-insulator structure

Tyschenko, I. E.; Cherkov, A. G.; Voelskow, M.; Popov, V. P.

Abstract

A strong decrease of the carrier mobility of the nanometer thick silicon films imposes limitation on the application of SOI structures in the current silicon planar CMOS technology. The formation of heterostructures-on-insulator is a way to increase carrier mobility in the nanometer scale layers.

Keywords: SOI; InSb

  • Poster
    IIT 2010, 01.-07.06.2010, Kyoto, Japan

Permalink: https://www.hzdr.de/publications/Publ-13967


Years: 2023 2022 2021 2020 2019 2018 2017 2016 2015