Photoluminescensia plenok Si3N4 implantirovannich ionami Ge+ i Ar+

Tyschenko, I. E.; Volodin, V. A.; Rebohle, L.; Voelskow, M.; Skorupa, W.

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Photoluminescensia plenok Si3N4 implantirovannich ionami Ge+ i Ar+

Tyschenko, I. E.; Volodin, V. A.; Rebohle, L.; Voelskow, M.; Skorupa, W.

Abstract

Spektri emissii i wosbuschdenia photoluminescencii pri komnatnoi temperature plenok Si3N4 implantirovannich plenok Ge+ i Ar+, issledovanui v savisimosti ot dosui ionov i temperaturui posledujuschego otschiga.

Keywords: photoluminescence; Si3N4; ion implantation; annealing

Fizika i Tekhnika Poluprovodnikov 33(1999)5, 559-566

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