Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationAtomistic simulation of ion-beam-induced defect formation
Posselt, M.
Abstract
Using a combination of computer simulations based on the binary collision approximation and molecular dynamics simulations the (meta)stable defect structure formed after a single ion impact into single crystalline silicon is obtained. Characteristics of the defect morphology such as the ratio between isolated and clustered defects are mainly determined by mass of the incident ion.
Keywords: computer simulation defects ion implantation molecular dynamics
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Lecture (Conference)
Int. Workshop Dresden ENLITE 09, 01.-03.04.2009, Dresden, Germany
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