Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication

Atomistic simulation of ion-beam-induced defect formation

Posselt, M.

Abstract

Using a combination of computer simulations based on the binary collision approximation and molecular dynamics simulations the (meta)stable defect structure formed after a single ion impact into single crystalline silicon is obtained. Characteristics of the defect morphology such as the ratio between isolated and clustered defects are mainly determined by mass of the incident ion.

Keywords: computer simulation defects ion implantation molecular dynamics

  • Lecture (Conference)
    Int. Workshop Dresden ENLITE 09, 01.-03.04.2009, Dresden, Germany

Permalink: https://www.hzdr.de/publications/Publ-12609


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