Diffusion suppression etc. during electrical activation in implanted Ge and Si-SOI

Skorupa, W.

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Diffusion suppression etc. during electrical activation in implanted Ge and Si-SOI

Skorupa, W.

Abstract

Recent results on diffusion suppression, electrical activation and related problems in implanted Ge and Si-SOI were reported. A prospect regarding millisecond thermal processing of high k dielectrics was given.

Invited lecture (Conferences)
24. Nutzertreffen Kurzzeittemperung, 23.10.2008, Dortmund, Deutschland

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