Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

An important parameter for a good bulk passivation of silicon solar cells is the hydrogen content of the silicon nitride anti reflexion layer [1,2]. Several studies [3,4] show that the hydrogen diffuses during the silicon nitride (SiN:H) deposion and the contact formation process into the bulk of the solar cell and passivates impurities and defects. In this work we present some results showing the benefit of an optimal hydrogen rate and a plasma pretreatment of the SiN especially for the bulk passivation. Additionally Nuclear Reaction Resonance Analysis measurements and effusion measurements were carried out for a better understanding of the hydrogen diffusion in the silicon nitride and at the boundary layer.