Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

We have realized a p-type ZnO surface layer by N+ ion implantation of a high quality ZnO wafer and subsequent annealing. The conduction type of this surface layer was revealed by scanning capacitance microscopy. Rectifying current–voltage characteristics for processed devices were coherent with the existence of an internal pn junction. Deep donor- and acceptor-like defects were investigated by junction deep level transient spectroscopy. The donor-like levels correspond to those commonly observed for E1 and E3 defects. The acceptor states resolved have thermal activation energies of about 150 meV and 280 meV, respectively.