Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

1 Publikation

Si- and Ge nanoclusters in ion implanted SiO2: electrical properties and memory applications

Gebel, T.

Abstract

The talk gives an overwiew about current results from IV and CV investigations of Ge and Si implanted oxide layers. The electric properties of the devices and the investigation of memory parameters will be discussed.

Keywords: non volatile memory; nanocluster

  • Sonstiger Vortrag
    Lecture at the Institute of Semiconductor Physics, Academy of Science, 16.11.2001, Kiev (Ukraine)

Permalink: https://www.hzdr.de/publications/Publ-4847

Jahre: 2023 2022 2021 2020 2019 2018 2017 2016 2015