Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

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Nonlinear response of semiconductor under intense THz excitation

Pashkin, O.

Abstract

Intense narrowband terahertz pulses from the FELBE free-electron laser facility and a complementary table-top high-field THz source are utilized to study nonlinear excitation regimes in semiconductors. In this talk we present several recent examples including impurities transitions in boron doped Si, HgTe topological quantum wells and plasmons in individual InGaAs nanowires.

Beteiligte Forschungsanlagen

Verknüpfte Publikationen

  • Eingeladener Vortrag (Konferenzbeitrag)
    Joint ELI Workshop on Advanced Technologies, 04.-06.12.2023, Szeged, Hungary

Permalink: https://www.hzdr.de/publications/Publ-38069


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