Excess vacancy generation in SiGe

Kögler, R.

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Excess vacancy generation in SiGe

Kögler, R.

Abstract

The excess vacancy generation in SiGe by ion implantation was investigated. In contrast to theory the excess vacancy generation in SiGe was observed to be higher than in Si. The reason is the incomplete vacancy-interstitial recombination of defects in SiGe.

Keywords: Ion implantation; implantation defects; excess defects; vacancies; Si; SiGe

Lecture (Conference)
Europien Materials Research Society Conference 2006 - E-MRS2006 -, 29.05.-02.06.2006, Nizza, France

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