Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Structure and magnetic properties of layered GdMn₂(Ge_1-xSix)₂ (0 ≤ x ≤ 1) compounds were studied. All the compounds crystallize in the tetragonal ThCr₂Si₂-type structure. It was shown by magnetization measurements at low temperature on quasi-single crystals that, with increasing Si concentration, the easy magnetization direction reorients from the c-axis to the basal plane. The spin reorientation occurs via an angular phase. A model of three magnetic sublattices coupled by negative intersublattice exchange interactions was used to describe the field dependences of the magnetization. For GdMn₂Ge₂ and GdMn₂(Ge_0.9Si_0.1)₂ in the fields applied along the c-axis, seven different magnetic structures were predicted, including two angular structures considered for the first time. The model explains formation of angular magnetic structures in zero field in GdMn₂(Ge_1-xSi_x)₂ system by taking into account magnetic anisotropy of Mn sublattices with a positive anisotropy constant K₁ and negative K₂.