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1 PublicationExperimental and theoretical studies on self-diffusion in amorphous germanium
Böckendorf, T.; Kirschbaum, J.; Kipke, F.; Bougeard, D.; Lundsgaard-Hansen, J.; Nylandsted-Larsen, A.; Posselt, M.; Bracht, H.
Abstract
Self-diffusion in amorphous germanium is studied at temperatures between 325 and 370 °C utilizing amorphous isotopically controlled germanium multilayer structures. The isotope multilayer is epitaxially grown on a single crystalline germanium-on-insulator structure by means of molecular beam epitaxy and subsequently amorphized by self-ion implantation. After heat treatment, the diffusional broadening of the isotope structure is measured with time-of-flight secondary ion mass spectrometry. The temperature dependence of self-diffusion is accurately described by the Arrhenius equation with the activation enthalpy Q = (2.21 ± 0.12) eV and pre-exponential factor D0 = (2.32 +20.79 −2.10 ) cm2 s−1. The activation enthalpy equals the activation enthalpy of solid phase epitaxial recrystallization (SPER). This agreement suggests that self-diffusion in amorphous germanium is similar to SPER, also mainly mediated by local bond rearrangements. Classical molecular dynamics simulations with a modified Stillinger–Weber-type interatomic potential yield results that are consistent with the experimental data and support the proposed atomic mechanism.
Keywords: Self-diffusion; Amorphous Germanium; Isotopically controlled multilayer structures; Germanium-on.insulator; Secondary ion mass spectrometry; Molecular dynamics simulations
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
- Data Center
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AIP Advances 14(2024), 065129
DOI: 10.1063/5.0183578
Permalink: https://www.hzdr.de/publications/Publ-39241
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