In-situ Characterization of MoS2 Based Field Effect Transistors during Ion Irradiation

Hlawacek, Gregor; Fekri, Zahra; Chava, Phanish; Erbe, Artur

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In-situ Characterization of MoS2 Based Field Effect Transistors during Ion Irradiation

Hlawacek, G.; Fekri, Z.; Chava, P.; Erbe, A.

Abstract

Here, in-situ Helium Ion Microscopy (HIM) has been used to electrically characterize single layer MoS 2 field effect transistors. These devices have been fabricated via chemical vapor deposition (CVD) and transferred onto SiO 2 /Si(p ++ ) chips for EBL contacting and further characterization. The oxide thickness is in the range of 200 nm to 300 nm.

Keywords: HIM; helium ion microscopy; MoS2; 2D materials

Involved research facilities

Ion Beam Center DOI: 10.17815/jlsrf-3-159

Related publications

DOI: 10.17815/jlsrf-3-159 is cited by this (Id 32177) publication

Lecture (Conference) (Online presentation)
M&M 2020 - Microscopy & Microanalysis, 03.-07.08.2020, Online, USA
DOI: 10.1017/S1431927620014105
Lecture (Conference) (Online presentation)
CMD2020GEFES, 31.08.-04.09.2020, Madrid, Spain

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