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1 PublicationLattice vibrations and electrical transport in (Bi1-xInx)2Se3 films
Zhu, J.; Liu, F.; Zhou, S.; Franke, C.; Wimmer, S.; Volobuev, V. V.; Springholz, G.; Pashkin, A.; Schneider, H.; Helm, M.
Abstract
We present Raman, terahertz transmission, and transport measurements on (BiIn)2Se3 films to study the evolution of phonon modes and resistivity with an increasing indium content across the metal-insulator phase transition. The frequencies of two Raman-active modes E2g and A21g as well as an infrared-active mode Eu increase with an increasing indium content due to the smaller atomic weight of indium compared to bismuth. Terahertz data are fitted by a Drude Lorentz model. Drude scattering rates increase from 47 to 75 cm -1 with an increasing indium content from 0% to 16% due to stronger impurity scattering. The carrier concentration drops significantly for x=24%. The temperature dependence of the resistivity switches from metallic at x=16% to insulating at x =24%, indicating a metal-insulator transition in between.
Keywords: lattice vibrations; Raman spectra; topological insulators; electrical transport; Bi2Se3
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 24382) publication
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Applied Physics Letters 109(2016), 202103-1-202103-5
DOI: 10.1063/1.4967987
ISSN: 0003-6951
Cited 4 times in Scopus
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