Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Zn1-xMgxO:Al (0.32 ≤ x ≤ 0.43) films were prepared by RF sputter deposition on c-sapphire and soda lime glass substrates with increasing growth temperatures from 298 up to 673 K. A ceramic ZnMgO:Al target was used as deposition material. The influence of the growth temperature on the structural, optical and electrical properties as well as the surface morphology and thin film composition was investigated. The grown films were all poly crystalline with a preferred out of plane orientation associated with the (002) XRD-reflection of ZnO but with a rising (111) MgO peak for higher temperatures. An increase in growth temperature results in a phase evolution from hexagonal to a mixed wurzite/rocksalt phase, a shift of the band gap to higher values as well as a rise in Mg concentration. A direct influence on surface