Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationFe-doped InN layers grown by molecular beam epitaxy
Wang, X.; Liu, S.; Ma, D.; Zheng, X.; Chen, G.; Xu, F.; Tang, N.; Shen, B.; Zhang, P.; Cao, X.; Wang, B.; Huang, S.; Chen, K.; Zhou, S.; Yoshikawa, A.
Abstract
Fe-doped InN have been grown by molecular-beam-epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from semi-insulating property of Fe-doped GaN. However, this heavy n-type doping can't be fully explained by Fe-concentration. Further analysis shows that more unintentionally-doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and surface is degraded with high density pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is gradually quenched by Fe-doping. It shows that Fe-doping is one of good choices to control electron density in InN.
Keywords: Fe-doping; InN; MBE
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 17870) publication
-
Applied Physics Letters 101(2012), 171905
DOI: 10.1063/1.4764013
Cited 4 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-17870
Years: 2023 2022 2021 2020 2019 2018 2017 2016 2015