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2 PublicationsThe electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared
Rebohle, L.; Lehmann, J.; Prucnal, S.; Helm, M.; Skorupa, W.
Abstract
In the past, the suitability of Er for Si-based light emission was already investigated in detail. However, much less attention has been paid to Nd and Ho which exhibit several emission lines in the near infrared according to their 4f energy level scheme. In this work we measure the electrical and electroluminescence properties of Nd- and Ho-implanted MOS structures and compare them with the corresponding properties of Er-implanted devices. Based on these results their suitability for integrated photonic devices is discussed.
Keywords: Electroluminescence; Erbium; Neodymium; Holmium; Rare Earth; Optoelectronic Device; Si-based light emission
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 16064) publication
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Lecture (Conference)
EMRS Fall Meeting, 19.-23.09.2011, Warsaw, Poland -
Journal of Luminescence 132(2012), 3151-3153
Online First (2011) DOI: 10.1016/j.jlumin.2011.11.024
Cited 6 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-16064
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