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1 PublicationCharacterization and local magnetic modification of ion irradiated GaMnAs
Li, L.; Yao, S. D.; Roshchupkina, O.; Prucnal, S.; Akhmadaliev, S.; Campion, R. P.; Rushforth, A. W.; Fassbender, J.; Helm, M.; Gallagher, B. L.; Timm, C.; Schmidt, H.; Zhou, S.
Abstract
We study the influence of ion irradiation on magnetic, magneto-transport and structural properties in Ga0.94Mn¬0.06As films. The carrier concentration is accurately controlled by defects introduced via ion irradiation. Magnetic properties strongly depend on the hole concentration. We present the modification of coercivity, magnetic anisotropy, and magnetotransport properties during such a procedure. By x-ray diffraction and Raman spectra, we exclude the effects from structural changes. Using lithograph made resist mask, one can realize planar local structures with different magnetic properties, indicating the promising future of ion irradiation for spintronics device fabrication.
Keywords: GaMnAs; ferromagnetism; ion irradiation
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 15863) publication
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Nuclear Instruments and Methods in Physics Research B 269(2011), 2469-2473
DOI: 10.1016/j.nimb.2011.07.096
Cited 3 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-15863
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