n+ doping of Ge by P implantation and subsequent RTA or FLA

Posselt, M.; Wündisch, C.; Schmidt, B.; Anwand, W.; Grötzschel, R.; Mücklich, A.; Skorupa, W.; Hortenbach, H.; Gennaro, S.; Bersani, M.; Guibertoni, D.; Möller, A.; Pelzing, P.; Clarysse, T.; Simoen, E.; Satta, A.; Bracht, H.

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n+ doping of Ge by P implantation and subsequent RTA or FLA

Posselt, M.; Wündisch, C.; Schmidt, B.; Anwand, W.; Grötzschel, R.; Mücklich, A.; Skorupa, W.; Hortenbach, H.; Gennaro, S.; Bersani, M.; Guibertoni, D.; Möller, A.; Pelzing, P.; Clarysse, T.; Simoen, E.; Satta, A.; Bracht, H.

Abstract

Abstract not available. For details, please contact the first author.

Keywords: Electrical doping; Germanium; Ion Implantation; Diffusion; Activation

Lecture (others)
Seminar talk at IMEC Leuven (Belgium), 07.02.2008, Leuven, Belgium

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