High Temperature Vacuum Annealing
High Temperature Vacuum Annealing Facility (J.I.P.ELEC)This facility is used for annealing and electrical activation of dopants after ion implantation in semiconductor materials where extremly high temperatures are neccessary for this purpose. The system is an induction furnace which can be operated at vacuum and inert gas ambient respec-tively.
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Substrate diameter
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max. 35 mm |
Chamber
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Quarz tube closed by aluminum flanges |
Susceptor
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Glassy corbon box on top of a glassy carbon tube to hold it at the center of the inductor |
Vacuum
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10-6 mbar (leak rate < 5·10-8 mbar·l/s) |
Process gases
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N2 and Ar of 9 ppb purity (H2O) |
Gas flow
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Mass flow controller, 0...2 slm |
Temperature range
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700...2000 °C |
Temperature control
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Pyrometer, thermo-couple optional |
Power
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max. 10 kW |
RF
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10...100kHz |
Cooling
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Flanges and inductor coil water cooled, quarz tube air cooled |
Process control
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Programmable controller providing detailed control over subsystems and processes |
Vacuum system
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Turbomolecular pump in connection with membrane pump - completely oil-free |
Current application
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Thermal processing of ion implanted SiC |