Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Effects of ion beam induced excess vacancies in silicon: analysis, modelling, application

Kögler, R.; Eichhorn, F.; Mücklich, A.; Skorupa, W.; Serre, C.; Perez-Rodriguez, A.

Keywords: vacancies; silicon; defect engineering

• Vortrag (Konferenzbeitrag)
  5th Int. Conf. on Ion Implantation and other Applications of Ions and Electrons (ION2004), 14.-17.06.2004, Kazimierz Dolny, Poland

Permalink: https://www.hzdr.de/publications/Publ-9909